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PIP3221-DC 数据表(PDF) 7 Page - NXP Semiconductors

部件名 PIP3221-DC
功能描述  Dual channel high-side TOPFET
PDF  16 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PIP3221-DC 数据表(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET™
Product data
Rev. 01 — 20 February 2004
7 of 16
9397 750 12361
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
[2]
9 V
≤ V
BG ≤ 35 V
[3]
This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
[4]
Defined as in ISO10483-1. For comparison purposes only.
[5]
This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse
duration is tp = 300 µs, and refers only to the applied load current.
[6]
RG is a resistor incorporated internally into the package.
[7]
5.5 V
≤ V
BG ≤ 35 V
[8]
An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc).
[9]
See Table 4 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH.
IL(oc)
load open circuit current
VLG = 3.5 V; per channel
-
−22
−40
µA
VLG = 16 V; per channel
-
−200 −300 µA
RL(oc)
open circuit load resistor
VS = 5 V; connected externally;
per channel; Figure 10
-10
-
k
Undervoltage [9]
VBG(uv)
battery-ground undervoltage
[11]
2
4.2
5.3
V
VBG(uv)(hys) battery-ground undervoltage
hysteresis
-
0.5
1.5
V
Overvoltage [9]
VBG(ov)
battery-ground overvoltage
[12]
35
40
45
V
VBG(ov)(hys) battery-ground overvoltage hysteresis
0.2
1
2
V
IG(ov)
overvoltage operating current
VBG = 45 V; per channel
-
1
2.5
mA
Overload protection
IL(lim)
self-limiting load current
VBG ≥ 8 V; VBL =VBG; Figure 7
8
1216A
Overtemperature protection [9][10]
Tj(th)
threshold junction temperature
[13]
150
170
190
°C
Tj(th)(hys)
threshold junction temperature
hysteresis
310
20
°C
Status [9]
VSG(CL)
status-ground clamping voltage
IS = 100 µA
5.5
7
8.5
V
VSG(L)
status-ground low voltage
IS = 100 µA; Figure 6
-
0.7
0.9
V
IS = 250 µA
-
-
1.1
V
IS(off)
status leakage current
VSG =5V
Tmb = 150 °C
--10
µA
Tmb =25 °C
-
0.1
1
µA
RS
status resistor
VSG = 5 V; connected externally;
Figure 10
[14]
-47
-
k
Table 7:
Static characteristics…continued
Limits are valid for
−40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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