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PIP3221-DC 数据表(PDF) 7 Page - NXP Semiconductors |
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PIP3221-DC 数据表(HTML) 7 Page - NXP Semiconductors |
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7 / 16 page ![]() Philips Semiconductors PIP3221-DC Dual channel high-side TOPFET™ Product data Rev. 01 — 20 February 2004 7 of 16 9397 750 12361 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. [1] For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This negative voltage is clamped by the device. [2] 9 V ≤ V BG ≤ 35 V [3] This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads. [4] Defined as in ISO10483-1. For comparison purposes only. [5] This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the applied load current. [6] RG is a resistor incorporated internally into the package. [7] 5.5 V ≤ V BG ≤ 35 V [8] An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc). [9] See Table 4 “Truth table” [10] Overtemperature protection is not active during reverse current operation. [11] Undervoltage sensor causes each output channel to switch off and reset. [12] Overvoltage sensor causes each output channel to switch off to protect the load. [13] After cooling below the reset temperature the channel will resume normal operation. [14] The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH. IL(oc) load open circuit current VLG = 3.5 V; per channel - −22 −40 µA VLG = 16 V; per channel - −200 −300 µA RL(oc) open circuit load resistor VS = 5 V; connected externally; per channel; Figure 10 -10 - k Ω Undervoltage [9] VBG(uv) battery-ground undervoltage [11] 2 4.2 5.3 V VBG(uv)(hys) battery-ground undervoltage hysteresis - 0.5 1.5 V Overvoltage [9] VBG(ov) battery-ground overvoltage [12] 35 40 45 V VBG(ov)(hys) battery-ground overvoltage hysteresis 0.2 1 2 V IG(ov) overvoltage operating current VBG = 45 V; per channel - 1 2.5 mA Overload protection IL(lim) self-limiting load current VBG ≥ 8 V; VBL =VBG; Figure 7 8 1216A Overtemperature protection [9][10] Tj(th) threshold junction temperature [13] 150 170 190 °C Tj(th)(hys) threshold junction temperature hysteresis 310 20 °C Status [9] VSG(CL) status-ground clamping voltage IS = 100 µA 5.5 7 8.5 V VSG(L) status-ground low voltage IS = 100 µA; Figure 6 - 0.7 0.9 V IS = 250 µA - - 1.1 V IS(off) status leakage current VSG =5V Tmb = 150 °C --10 µA Tmb =25 °C - 0.1 1 µA RS status resistor VSG = 5 V; connected externally; Figure 10 [14] -47 - k Ω Table 7: Static characteristics…continued Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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