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PIP3221-DC 数据表(PDF) 9 Page - NXP Semiconductors |
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PIP3221-DC 数据表(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page ![]() Philips Semiconductors PIP3221-DC Dual channel high-side TOPFET™ Product data Rev. 01 — 20 February 2004 9 of 16 9397 750 12361 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. VBG = 13 V; VIG =5V;Tj =25 °CVBG = 16 V; VIG =5V; Tmb =25 °C Fig 6. Status current as a function of status-ground voltage; typical values. Fig 7. Self-limiting load current as a function of battery-load voltage; typical values. 5.5 V ≤ VBG ≤ 35 V VBG =35V Fig 8. Input-ground threshold voltage as a function of junction temperature. Fig 9. Battery quiescent current as a function of junction temperature; typical values. 03pa94 0 1 2 3 4 5 0123 VSG (V) IS (mA) 03pa93 0 4 8 12 16 0 4 8 12 16 VBL (V) IL(lim) (A) 03pa98 1 1.5 2 2.5 3 3.5 -50 0 50 100 150 200 Tj (°C) VIG(th) (V) max min VIG(off) VIG(on) 03pa97 0 2 4 6 -50 0 50 100 150 200 Tj (°C) IB ( µA) |
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