MB91F525FHDPMC datasheet(191/280 Pages) CYPRESS

191 / 280 page

Document Number: 002-04662 Rev. *F

Page 191 of 280

MB91520 Series

Flash Memory

(1) Electrical Characteristics

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

–

200

800

8 Kbytes sector*1,

excluding internal preprogramming time

–

300

1100

8 Kbytes sector*1,

including internal preprogramming time

–

400

2000

64 Kbytes sector*1,

excluding internal preprogramming time

–

700

3700

64 Kbytes sector*1,

including internal preprogramming time

8-bit writing time

–

288

µs

Exclusive of overhead time at

system level*1

16-bit writing time

–

384

µs

Exclusive of overhead time at

system level*1

ECC writing time

–

288

µs

Exclusive of overhead time at

system level*1

Erase cycle*2/

Data retain time

1,000 cycles/

20 years,

10,000 cycles/

10 years,

100,000 cycles/

5 years

–

Average TA = +85 °C*3

*1: The guaranteed value for erasure up to 100,000 cycles.

*2: Number of erase cycles for each sector.

*3: This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into

normalized value at + 85 °C).

(2) Notes

While the Flash memory is written or erased, shutdown of the external power (Vcc) is prohibited.

In the application system where Vcc might be shut down while writing or erasing, be sure to turn the power off by using an external

voltage detection function.

To put it concretely, after the external power supply voltage falls below the detection

voltage (VDL*), hold Vcc at 2.7 V or more within the duration calculated by the following expression:

Td*[µs] + (period of PCLK [µs] × 257) + 50 [µs]

*: See “4.AC Characteristics (8) Low-voltage detection (External low-voltage detection) ”

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