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HCS370IP 数据表(PDF) 25 Page - Microchip Technology |
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HCS370IP 数据表(HTML) 25 Page - Microchip Technology |
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25 / 36 page ![]() 2002 Microchip Technology Inc. Preliminary DS41111D-page 25 HCS370 Output Low Voltage D080 VOL Output pins —— 0.6 V IOL = 8.5 mA, VDD = 4.5V Output High Voltage D090 VOH Output pins VDD-0.7 — — V IOH = -3.0 mA, VDD = 4.5V D091 VOH LED 1.5 — — V IOH = -0.5 mA, VDD = 4.5V Internal Pull-down Resistance D100 Rpd S0 - S5, SHIFT 40 75 100 KOhms If enabled Data EEPROM Memory D120 ED Endurance 200K 1000K — E/W 25 °C at 5V D121 Vdrw VDD for Read/Write 2.05 — 5.5 V D122 Tdew Erase/Write Cycle Time(1) —4 10 ms Note 1: * These parameters are characterized but not tested. 2: † "Typ" column data is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. 3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current consumption. 4: Should operate down to VBOR but not tested below 2.0V. The test conditions for all IDD measurements in active Operation mode are: all I/O pins tristated, pulled to VDD. MCLR = VDD; WDT enabled/disabled as specified. The power-down/shutdown current in SLEEP mode does not depend on the oscillator frequency. Power- down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS. The ∆ current is the additional current consumed when the WDT is enabled. This current should be added to the base IDD or IPD measurement. TABLE 9-1: DC CHARACTERISTICS: HCS370 (CONTINUED) DC Characteristics All Pins Except Power Supply Pins Standard Operating Conditions (unless otherwise stated) Operating Temperature 0 °C ≤ TA ≤ +70°C (Commercial) -40 °C ≤ TA ≤ +85°C (Industrial) Param No. Sym. Characteristic Min. Typ.† Max. Units Conditions |
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