IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700

Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Fax: +49-6206-503629

I

XYS reserves the right to change limits, test conditions, and dimensions.

IXTH11N80

IXTH13N80

IXTM11N80

IXTM13N80

T

-50

-25

0

25

50

75

100

125

150

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V

GS(th)

T

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

18

T

-50

-25

0

25

50

75

100

125

150

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

0

2468 10 12 14 16 18 20 22 24 26

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

V

T

V

01234

56789

10

0

2

4

6

8

10

12

14

16

18

T

V

V

02

468

10

12

0

2

4

6

8

10

12

14

16

18

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

Fig. 3 R

Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs.

Fig. 6 Temperature Dependence of

Case Temperature

Breakdown and Threshold Voltage