IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXTH11N80

IXTH13N80

IXTM11N80

IXTM13N80

V

1

10

100

1000

0.1

1

10

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

2

4

6

8

10

12

14

16

18

V

0

5

10

15

20

25

0

500

1000

1500

2000

2500

3000

3500

4000

4500

Pulse Width - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

D=0.5

C

rss

C

oss

100ms

10ms

1ms

100µs

10µs

Limited by R

DS(on)

C

iss

Single Pulse

Gate Charge - nCoulombs

0

25

50

75

100

125

150

0

2

4

6

8

10

V

I

I

T

T

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

f = 1 MHz

V

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

Fig.11 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.10 Source Current vs. Source

to Drain Voltage