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IXTH11N80 数据表(PDF) 1 Page - IXYS Corporation |
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IXTH11N80 数据表(HTML) 1 Page - IXYS Corporation |
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1 / 4 page ![]() IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 I XYS reserves the right to change limits, test conditions, and dimensions. Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 800 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 800 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25°C 11N80 11 A 13N80 13 A I DM T C = 25°C, pulse width limited by TJM 11N80 44 A 13N80 52 A P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s MegaMOSTMFET N-Channel Enhancement Mode V DSS I D25 R DS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 Ω Ω Ω Ω Ω IXTH / IXTM 13N80 800 V 13 A 0.80 Ω Ω Ω Ω Ω G G = Gate, D = Drain, S = Source, TAB = Drain TO-204 AA (IXTM) TO-247 AD (IXTH) 915380F (5/96) D (TAB) Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, I D = 3 mA 800 V V GS(th) V DS = V GS, ID = 250 µA 2 4.5 V I GSS V GS = ±20 V DC, VDS = 0 ±100 nA I DSS V DS = 0.8 • V DSS T J = 25°C 250 µA V GS = 0 V T J = 125°C1 mA R DS(on) V GS = 10 V, I D = 0.5 ID25 11N80 0.95 Ω Pulse test, t ≤ 300 µs, 13N80 0.80 Ω Features q International standard packages q Low R DS (on) HDMOS TM process q Rugged polysilicon gate cell structure q Low package inductance (< 5 nH) - easy to drive and to protect q Fast switching times Applications q Switch-mode and resonant-mode power supplies q Motor controls q Uninterruptible Power Supplies (UPS) q DC choppers Advantages q Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) q Space savings q High power density |
类似零件编号 - IXTH11N80 |
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类似说明 - IXTH11N80 |
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