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©2012 Silicon Storage Technology, Inc.

DS75032A

10/12

2

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

SST13LP05

Data Sheet

Product Description

The SST13LP05 is a fully matched, dual-band power amplifier module (PAM) based on the highly-reli-

able InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable

power detectors, and low-current analog on/off control interfaces. The SST13LP05 provides stable RF

current.

With a near-zero Rest of Bill of Materials (RBOM), the SST13LP05 is designed for 802.11a/b/g appli-

cations covering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for U.S., European, and Japanese

markets.

The SST13LP05 has excellent linearity, typically 4% added Error Vector Magnitude (EVM) at 19 dBm

output power. This output power is essential for 54 Mbps 802.11g operation while meeting 802.11g

spectrum mask at 23 dBm and 802.11b spectrum mask at 23.5 dBm. For 802.11a operation, the

SST13LP05 typically demonstrates <4% added EVM at 18 dBm output power while meeting 802.11a spec-

trum mask at 22.5 dBm.

The SST13LP05 also has wide-range (>20 dB), temperature-stable (±0.5 dB across 0°C to +85°C),

directionally-coupled, power detectors which provide a reliable and cost-effective solution to board-

level power control. The device’s analog on/off control can be driven by an analog or digital control sig-

nal from either a transceiver or baseband chip.

These features, coupled with low operating current, make the SST13LP05 ideal for the final stage

power amplification in both battery-powered 802.11a/b/g WLAN transmitters and access point applica-

tions.

The SST13LP05 is offered in a 16-contact LGA package. See Figure 2 for pin assignments and Table 1

for pin descriptions.