Microchip Proprietary Information

©2012 Silicon Storage Technology, Inc.

DS75032A

10/12

5

2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier

SST13LP05

Data Sheet

Electrical Specifications

The AC and DC specifications for the power amplifier interface signals. Refer to Tables 2 and 4 for the DC volt-

age and current specifications. Refer to Figures 3 through 22 for the RF performance.

For 802.11b/g Operation

Absolute Maximum Stress Ratings Applied conditions greater than those listed under “Absolute Maxi-

mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these conditions or conditions greater than those defined in the operational sections

of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reli-

ability.

Table 2: DC Electrical Characteristics

Symbol

Parameter

Min.

Typ

Max.

Unit

Supply Voltage

3.0

3.3

3.6

V

Supply Current

for 802.11g, 19 dBm

160

mA

for 802.11b, 23.5 dBm

235

mA

Analog control current at On state

2

mA

Reference Voltage

2.95

V

T2.0 75032

Table 3: AC Electrical Characteristics for Configuration

Symbol

Parameter

Min.

Typ

Max.

Unit

Frequency range

2.4

2.5

GHz

G

Small signal gain

28

29

dB

Gain variation over temperature 0

1

dB

Gain flatness over any 50 MHz bandwidth

-0.3

0.3

dB

ACPR

Meet 11b spectrum mask

22

23

dBm

Meet 11g OFDM 54 Mbps spectrum mask

22

23

dBm

-28

dB

11g OFDM signal when operating at 3.3V Vcc

4

%

2f, 3f, 4f, 5f

-50

dBc

-60

dBc

In/Out return loss at 50

nominal impedance

6

dB

T3.0 75032