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TLS115D0 数据表(PDF) 7 Page - Infineon Technologies AG

部件名 TLS115D0
功能描述  High Precision Voltage Tracker
PDF  26 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLS115D0 数据表(HTML) 7 Page - Infineon Technologies AG

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TLS115D0
High Precision Voltage Tracker
General product characteristics
Data Sheet
7
Rev. 1.00
2016-10-13
3
General product characteristics
3.1
Absolute maximum ratings
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Table 1
Absolute maximum ratings1)
Tj = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design.
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min.
Typ.
Max.
Input IN
Voltage
VIN
-16
45
V
P_3.1.1
Enable EN
Voltage
VEN
-16
45
V
P_3.1.2
Adjust ADJ
Voltage
VADJ
-16
45
V
P_3.1.3
Output OUT
Voltage
VOUT
-5
45
V
P_3.1.4
Power Good PG
Voltage
VPG
-0.3
7
V
P_3.1.5
Temperatures
Junction temperature
Tj
-40
150
°C
P_3.1.6
Storage temperature
Tstg
-55
150
°C
P_3.1.7
ESD Absorption
ESD susceptibility to GND
VESD,HBM
-4
4
kV
Human Body
Model (HBM)2)
2) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)
P_3.1.8
ESD susceptibility to GND
VESD,CDM
-1
1
kV
Charge Device
Model (CDM)3)
P_3.1.9
ESD susceptibility to GND
VESD,CDM
-1
1
kV
Charge Device
Model (CDM) at
corner pins3)
3) ESD susceptibility, Charged Device Model “CDM” according JEDEC JESD22-C101
P_3.1.10



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