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TLS115D0 数据表(PDF) 9 Page - Infineon Technologies AG |
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TLS115D0 数据表(HTML) 9 Page - Infineon Technologies AG |
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9 / 26 page ![]() TLS115D0 High Precision Voltage Tracker General product characteristics Data Sheet 9 Rev. 1.00 2016-10-13 Table 4 Thermal resistance TLS115D0LD in PG-TSON-10 package Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Junction to case1) 1) Not subject to production test, specified by design. RthJC – 17 – K/W – P_3.3.7 Junction to pin1) RthJP – 96 – K/W – P_3.3.8 Junction to ambient1) RthJA –67 – K/W 2s2p board2) 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product (chip and package) was simulated on a 76.2 × 114.3 × 1.5 mm3 board with 2 inner copper layers (2×70µm Cu, 2×35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. P_3.3.9 Junction to ambient1) RthJA – 194 – K/W 1s0p board, footprint only3) 3) Specified RthJA value is according to JEDEC JESD 51-3 at natural convection on FR4 1s0p board; The product (chip and package) was simulated on a 76.2×114.3×1.5 mm3 board with 1 copper layer (1 x 70 µm Cu). P_3.3.10 Junction to ambient1) RthJA – 82 – K/W 1s0p board, 300 mm2 heatsink area on PCB3) P_3.3.11 Junction to ambient1) RthJA – 68 – K/W 1s0p board, 600 mm2 heatsink area on PCB3) P_3.3.12 |
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