2

RF Device Data

NXP Semiconductors

AFM906N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +30

Vdc

Gate--Source Voltage

--6.0, +12

Vdc

Operating Voltage

7.5, +0

Vdc

Storage Temperature Range

--65 to +150

C

Case Operating Temperature Range

--40 to +150

C

--40 to +150

C

Derate above 25C

65.8

0.53

W

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

1.9

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C, passes 1000 V

Machine Model (per EIA/JESD22--A115)

A, passes 50 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

2

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

500

nAdc

On Characteristics

Gate Threshold Voltage

1.8

2.15

2.6

Vdc

Drain--Source On--Voltage

—

0.11

—

Vdc

Forward Transconductance

—

4.4

—

S

1. Continuous use at maximum temperature will affect MTTF.

(continued)