AFM906N

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

Designed for handheld two--way radio applications with frequencies from

136 to 941 MHz. The high gain, ruggedness and wideband performance of this

device make it ideal for large--signal, common--source amplifier applications in

handheld radio equipment.

Frequency

(MHz)

(W)

(dB)

(%)

(W)

0.16

16.2

62.0

6.5

Frequency

(MHz)

(B)

(%)

(W)

20.3

70.8

6.8

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(dBm)

Test

Voltage

Result

CW

> 65:1 at all

Phase Angles

21

(3 dB Overdrive)

10.8

No Device

Degradation

1. Measured in 440–520 MHz broadband reference circuit (page 6).

2. The values shown are the minimum measured performance numbers across the

indicated frequency range.

3. Measured in 520 MHz narrowband production test fixture (page 9).

Features

 Characterized for operation from 136 to 941 MHz

 Unmatched input and output allowing wide frequency range utilization

 Integrated ESD protection

 Integrated stability enhancements

 Wideband — full power across the band

 Exceptional thermal performance

 Extreme ruggedness

 High linearity for: TETRA, SSB

Typical Applications

 Output stage VHF band handheld radio

 Output stage UHF band handheld radio

 Output stage for 700–800 MHz handheld radio

 Generic 6 W driver for ISM and broadcast final stage transistors

Document Number: AFM906N

Rev. 1, 8/2016

NXP Semiconductors

Technical Data

136–941 MHz, 6.0 W, 7.5 V

WIDEBAND

AIRFAST RF POWER LDMOS

TRANSISTOR

AFM906N

DFN 4  6

15

9

11

10

1

16

14

13

12

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

Note: Exposed backside of the package is

the source terminal for the transistor.

(Top View)

2

3

4

5

6

7

8

Gate

Gate

Gate

Gate

Drain

Drain

Drain

Drain

Figure 1. Pin Connections

 2016 NXP B.V.