10

RF Device Data

NXP Semiconductors

AFM906N

TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND

PRODUCTION TEST FIXTURE

0

10

8

6

4

34

12

2

Figure 10. Output Power versus Gate--Source Voltage

Figure 11. Power Gain, Drain Efficiency, and

Output Power versus Input Power

22

21

0

90

70

50

10

10

8

20

19

18

17

16

13

0.00

30

4

15

2

14

12

0.05

0.10

0.15

0.20

0.25

0.30

0.35

6

1.5

2.5

3.5