2

RF Device Data

NXP Semiconductors

AFM907N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +30

Vdc

Gate--Source Voltage

–6.0, +12

Vdc

Operating Voltage

7.5, +0

Vdc

Storage Temperature Range

–65 to +150

°C

Case Operating Temperature Range

–40 to +150

°C

–40 to +150

°C

Derate above 25°C

65.7

0.52

W

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

1.9

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C, passes 1000 V

Charge Device Model (per JESD22--C101)

C3, passes 2000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

2

μAdc

Gate--Source Leakage Current

—

—

1

nAdc

On Characteristics

Gate Threshold Voltage

1.6

2.1

2.6

Vdc

Drain--Source On--Voltage

—

0.12

—

Vdc

Forward Transconductance

—

9.8

—

S

Dynamic Characteristics

Reverse Transfer Capacitance

—

2.4

—

pF

Output Capacitance

—

55.2

—

pF

Input Capacitance

—

95.7

—

pF

1. Continuous use at maximum temperature will affect MTTF.

(continued)