10

RF Device Data

NXP Semiconductors

AFM907N

TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND RF TEST FIXTURE

Figure 10. Output Power versus Gate--Source Voltage

2.5

3.0

3.5

4.0

10

8

6

4

2

0

2.0

1.5

1.0

f= 520 MHz

12

0

Figure 11. Power Gain, Drain Efficiency and Output Power

versus Input Power

0

90

25

24

23

22

21

20

19

18

17

16

15

0.05

0.10

0.15

0.20

0.25

50

30

10

2

4

6

8

70

0.30

0.35

0.40

10

14

12