AFM907N datasheet(3/16 Pages) NXP

部件名	AFM907N

功能描述	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

PDF	16 Pages

Scroll/Zoom	100%

制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 16 page

AFM907N

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Narrowband Performance – 520 MHz (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ = 100 mA,

Pin = 18.5 dBm, f = 520 MHz

Common--Source Amplifier Output Power

Pout

—

8.4

—

Drain Efficiency

ηD

—

73.9

—

Load Mismatch/Ruggedness (In NXP Narrowband 520 MHz RF Test Fixture, 50 ohm system) IDQ = 100 mA

Frequency

(MHz)

Signal

Type

VSWR

(dBm)

Test Voltage, VDD

Result

520

> 65:1 at all Phase Angles

(3 dB Overdrive)

10.8

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFM907NT1

T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel

DFN 4 × 6

AFM907N 数据表(PDF) 3 Page - NXP Semiconductors

AFM907N 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载