2

RF Device Data

NXP Semiconductors

MHT2012N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +65

Vdc

Gate--Source Voltage

–0.5, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

–40 to +150

C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 81C, 12.5 W, 2450 MHz

14

4.3

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

1B, passes 500 V

Charge Device Model (per JS--002--2014)

C3, passes 1000 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Zero Gate Voltage Drain Leakage Current

—

—

500

nAdc

Gate--Source Leakage Current

—

—

200

nAdc

Stage 1 -- On Characteristics

Gate Threshold Voltage

0.8

1.2

1.6

Vdc

—

4.9

—

Vdc

1. Continuous use at maximum temperature will affect MTTF.

(continued)