MHT2012N datasheet(5/14 Pages) NXP

5 / 14 page

MHT2012N

RF Device Data

NXP Semiconductors

Table 9. Load Pull Performance — Maximum Power Tuning

VDD =28 Vdc, IDQ1 =12 mA, IDQ2 = 73 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Output Power

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

PAE

(%)

2400

40.9 + j23.6

48.3 – j23.1

7.22 – j4.32

30.0

42.2

49.8

49.7

2450

38.1 + j30.8

47.3 – j30.9

7.06 – j3.92

29.9

42.3

51.9

51.8

2500

32.9 + j30.7

40.4 – j32.8

6.76 – j3.83

30.0

42.4

52.6

52.5

(MHz)

Zsource

()

Zin

()

Max Output Power

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

PAE

(%)

2400

40.9 + j23.6

42.8 – j26.8

7.50 – j4.46

27.9

42.8

49.4

49.3

2450

38.1 + j30.8

40.4 – j32.0

7.20 – j4.35

27.8

43.0

50.8

50.7

2500

32.9 + j30.7

33.9 – j32.4

7.05 – j4.26

27.9

43.0

51.2

51.1

(1) Load impedance for optimum P1dB power.

(2) Load impedance for optimum P3dB power.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Note: Measurement made on a per side basis.

Table 10. Load Pull Performance — Maximum Efficiency Tuning

VDD =28 Vdc, IDQ1 =12 mA, IDQ2 = 73 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Efficiency

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

PAE

(%)

2400

40.9 + j23.6

58.6 – j22.8

4.19 – j1.25

30.5

40.9

56.2

56.1

2450

38.1 + j30.8

56.8 – j34.4

4.01 – j1.06

30.2

41.0

56.8

56.7

2500

32.9 + j30.7

48.5 – j37.7

3.63 – j1.34

30.4

41.1

59.5

59.4

(MHz)

Zsource

()

Zin

()

Max Efficiency

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

PAE

(%)

2400

40.9 + j23.6

51.9 – j26.8

4.28 – j1.45

28.5

41.6

54.3

54.2

2450

38.1 + j30.8

48.5 – j35.0

4.19 – j1.50

28.2

41.9

55.2

55.1

2500

32.9 + j30.7

40.4 – j36.5

3.94 – j1.74

28.4

42.0

57.0

56.9

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Note: Measurement made on a per side basis.

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Zsource Zin

Zload

Output Load Pull

Tuner and Test

Circuit

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