S72XS-R datasheet(1/7 Pages) CYPRESS

部件名	S72XS-R

功能描述	256 Mb (16M x 16 bit), 1.8V MirrorBit짰 Flash and DDR DRAM

PDF	7 Pages

Scroll/Zoom	100%

制造商	CYPRESS [Cypress Semiconductor]

网页	http://www.cypress.com

标志

1 / 7 page

S72XS-R MCP

256 Mb (16M x 16 bit), 1.8V

MirrorBit

® Flash and DDR DRAM

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose

, CA 95134-1709

•

408-943-2600

Document Number: 002-00772 Rev. *J

Revised March 18, 2016

Features

■ Power supply voltage

❐ 1.7V to 1.95V

■ Burst speed

❐ Flash = 83 MHz, 104 MHz or 108 MHz

❐ DDR DRAM = 166 MHz

■ Packages

❐ 8.0  8.0 mm, 133-ball MCP

■ Temperature range

❐ Wireless: –25 °C to +85 °C

❐ Industrial: –40 °C to +85 °C

General Description

This datasheet contains information on the S72XS-R Multi-Chip

Product (MCP) stacked products. Refer to the S29VS256R,

S29VS128R, S29XS256R, S29XS128R datasheet (002-00833)

for full electrical specifications of the Flash memory component.

The S72XS series is a product line of stacked products (MCPs), and

consists of:

■ S29XS family Address-High, Address-Low, Data Multiplexed

Flash memory die

■ DDR DRAM

Table 1 and Table 2 lists the products covered in this datasheet.

Block Diagram

Table 1. Memory Density

Flash Density

DRAM Density

256 Mb

S72XS256RE0

Table 2. DDR DRAM Specification Reference

Density

Reference Name

Document Identification Number

256 Mb

256 Mb (16M

 16-bit) DDR DRAM

SDM256D166D1R/D3R

F-R S T#

RST#

A DQ15-A DQ0

A D Q15-A D Q0

A max -A 16 (No Connec t)

F -VPP

VPP

CLK

F-C LK

RDY

F-R D Y

F-C E #

CE#

F-O E #

OE#

F-W E #

WE#

F -AVD #

AVD#

VCC

F-V C C

V CCQ

F-V C C Q

VSS

V SSQ

D-RA S #

RA S#

CK

D-CLK

D-CA S #

CA S#

CK#

D-CLK #

D -BA0

BA 0

LDQS

D-LD Q S

D -BA1

BA 1

UDQS

D-UDQ S

D-CK E

CKE

LDM

D-LD Q M

D-W E #

W E#

UDM

D-UDQ M

D-CE #

CS#

A max -A 0

DQ15-DQ0

D-DQ 15 - D-DQ 0

D-V C C

VDD

V SS

VSS

D-V CCQ

V DDQ

V SSQ

D-A m ax - D-A 0

NOR

FLASH

XS-R

(AADM )

DDR

DRAM

ME MO R Y

Notes

1. Amax indicates highest address bit for memory component: Amax = A12 for 256 Mb DDR DRAM.

2. For Flash, A15 - A0 is tied to DQ15 - DQ0.

类似零件编号 - S72XS-R

制造商	部件名	数据表	功能描述
Heyco.	S7200	145Kb / 1P	Preassembled Cordset Components
Satco Products, Inc.	S7201	131Kb / 1P	23 watt; PAR38 Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts
	S7202	131Kb / 1P	23 watt; PAR38 Compact Fluorescent; 4100K; 82 CRI; Medium base; 120 volts
	S7204	131Kb / 1P	15 watt; PAR30 Compact Fluorescent; 2700K; 82 CRI; Medium base; 120 volts
	S7205	131Kb / 1P	15 watt; PAR30 Compact Fluorescent; 4100K; 82 CRI; Medium base; 120 volts

More results

类似说明 - S72XS-R

制造商	部件名	数据表	功能描述
AMIC Technology	A48P3616	2Mb / 62P	8M X 16 Bit DDR DRAM
AMIC Technology	A48P4616	2Mb / 71P	16M X 16 Bit DDR DRAM
Austin Semiconductor	AS4SD16M16	1Mb / 51P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
Austin Semiconductor	AS4SD16M16	2Mb / 52P	256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
Etron Technology, Inc.	EM6AA160TS	406Kb / 51P	16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Technology, Inc.	EM6AA160TSA	436Kb / 54P	16M x 16 bit DDR Synchronous DRAM (SDRAM)
AMIC Technology	A48P3616B	1Mb / 66P	8M X 16 Bit DDR DRAM
AMIC Technology	A48P4616B	1Mb / 66P	16M X 16 Bit DDR DRAM
Etron Technology, Inc.	EM6AA160TSC-4G	481Kb / 63P	16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Technology, Inc.	EM63A165TS-5IG	565Kb / 53P	16M x 16 bit Synchronous DRAM (SDRAM)