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PIP3210-R 数据表(PDF) 7 Page - NXP Semiconductors

部件名 PIP3210-R
功能描述  TOPFET high side switch
PDF  13 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PIP3210-R 数据表(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TOPFET high side switch
PIP3210-R
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, t
p = 300
µs.
R
ON = f(Tj); parameter VBG; condition IL = 10 A
Fig.6. Typical on-state characteristics, T
j = 25 ˚C.
I
L = f(Tj); parameter VBG; tp = 250
µs
Fig.7. Typical supply characteristics, 25 ˚C.
I
G = f(VBG); parameter VIG
Fig.8. Typical on-state resistance,T
j = 25 ˚C.
R
ON = f(VBG); condition IL = 10 A; tp = 300
µs
Fig.9. Typical operating supply current.
I
G = f(Tj); parameters IL, VBG; condition VIG = 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
VBL
0
1
2
3
4
5
0
10203040506070
VBG / V
IBG(ON) / mA
OPERATING VIG = 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT VIG = 0 V
0
20
40
60
80
-50
0
50
100
150
200
Tj /
OC
RON / mOhm
VBG = 6 V
9 V =< VBG =< 35 V
typ .
RON / mOhm
20
22
24
26
28
30
32
34
36
38
40
1
10
100
VBG / V
RON max
0
10
20
30
40
50
012
VBL / V
IL / A
5
6
7
VBG / V
> = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
200
Tj /
OC
IG / mA
lL > IL(TO)
VBG = 50 V
9 V <= VBG <= 35 V
typ.
lL = 0 A
lL > IL(TO)
September 2001
7
Rev 1.000



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