PIP3210-R datasheet(11/13 Pages) PHILIPS

11 / 13 page

Philips Semiconductors

Product specification

TOPFET high side switch

PIP3210-R

Fig.28. Short circuit load threshold voltage.

BL(TO) = f(VBG); conditions -40˚C

≤ T

≤ 150˚C

Fig.29. Typical output capacitance. T

mb = 25 ˚C

bl = f(VBL); conditions f = 1 MHz, VIG = 0 V

Fig.30. Typical reverse battery characteristic.

G = f(VBG); conditions IL = 0 A, Tj = 25 ˚C

Fig.31. Typical overload current, V

BL = 8V.

L = f(Tj); parameter VBG = 13V;tp = 300

µs

Fig.32. Typical short circuit load threshold voltage.

BL(TO) = f(Tj); condition VBG = 16 V

Fig.33. Transient thermal impedance.

th j-mb = f(t); parameter D = tp/T

1020

304050

VBG/ V

VBL(TO) / V

min.

max.

typ. 25˚C

BUK215-50Y

-50

100

150

200

Tj /

IL(lim) / A

1020304050

10 nF

1nF

100pF

CBL

VBL / V

VBL(TO) / V

10.0

10.2

10.4

10.6

10.8

11.0

11.2

11.4

11.6

11.8

12.0

-50

100

150

200

Tj /

IG / mA

-200

-150

-100

-50

-20

-15

-10

-5

VBG / V

D =

Zth j-mb ( K / W )

t / s

1e+02

1e-01

1e-03

1e-05

1e-07

1e+01

1e-03

1e-02

1e-01

1e+00

D =

0.5

0.2

0.1

0.05

0.02

September 2001

Rev 1.000

PIP3210-R 数据表(PDF) 11 Page - NXP Semiconductors

PIP3210-R 数据表(HTML) 11 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载