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PIP3210-R 数据表(PDF) 8 Page - NXP Semiconductors |
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PIP3210-R 数据表(HTML) 8 Page - NXP Semiconductors |
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8 / 13 page ![]() Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.10. Typical supply quiescent current. I B = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V Fig.11. Typical off-state leakage current. I L = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V. Fig.12. Status leakage current. I S = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V Fig.13. Low load current detection threshold. I L(OC) = f(Tj); conditions VIG = 5 V; VBG ≥ 9 V Fig.14. Supply undervoltage thresholds. V BG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤ 2 V Fig.15. Supply overvoltage thresholds. V BG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA 100E-12 1E-9 10E-9 100E-9 1E-6 10E-6 100E-6 -50 0 50 100 150 200 IB / A Tj / OC max. typ. 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 Tj / OC IL(OC) / A typ. min. max. 10E-12 00E-12 1E-9 10E-9 100E-9 1E-6 10E-6 100E-6 -50 0 50 100 150 200 Tj / OC IL / A max. typ. 2.5 3.5 4.5 5.5 -50 0 50 100 150 200 Tj / OC VBG(UV) / V typ. on off 1E-9 10E-9 100E-9 1E-6 10E-6 100E-6 -50 0 50 100 150 200 Tj / OC IS / A max. typ. 35 40 45 50 55 -50 0 50 100 150 200 Tj / OC VBG(OV) / V max. min. off on September 2001 8 Rev 1.000 |
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