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TPS16632RGET 数据表(PDF) 11 Page - Texas Instruments |
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TPS16632RGET 数据表(HTML) 11 Page - Texas Instruments |
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11 / 30 page ![]() u t u (IN) (INRUSH) (OUT) dVdT dV V I C I C dT t VIN VOUT FLTb VIN VOUT FLTb IIN 11 TPS1663 www.ti.com SLVSET9A – SEPTEMBER 2018 – REVISED OCTOBER 2018 Product Folder Links: TPS1663 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated Feature Description (continued) 8.3.2 Overvoltage Protection (OVP) The TPS1663x incorporate circuitry to protect the system during overvoltage conditions. The TPS16630 features over voltage cut off functionality. A voltage more than V(OVPR) on OVP pin turns off the internal FET and protects the downstream load. To program the OVP threshold externally, connect a resistor divider from IN supply to OVP terminal to GND as shown in the Typical Application circuit. The TPS16632 features an internally fixed 40 V maximum overvoltage clamp V(OVC) functionality. The TPS16632 clamps the output voltage to V(OVC), when the input voltage exceeds 40 V. During the output voltage clamp operation, the power dissipation in the internal MOSFET is PD = (V(IN) – V(OVC)) × I(OUT). Excess power dissipation for prolonged period can make the device to enter into thermal shutdown. Figure 1 illustrates the overvoltage cut-off functionality and Figure 2 illustrates the over voltage clamp functionality . TPS16630 OVP Setting at 33 V Figure 1. Over Voltage Cut-off Response at 33-V Level TPS16632 COUT = 10 µF RLOAD = 30 Figure 2. Over Voltage Clamp Response 8.3.3 Hot Plug-In and In-Rush Current Control The devices are designed to control the inrush current upon insertion of a card into a live backplane or other "hot" power source. This limits the voltage sag on the backplane’s supply voltage and prevents unintended resets of the system power. The controlled start-up also helps to eliminate conductive and radiative interferences. An external capacitor connected from the dVdT pin to GND defines the slew rate of the output voltage at power-on. The fastest output slew rate of 24/240 µscan be achieved by leaving dVdT pin floating. The inrush current can be calculated using Equation 1. (1) where tdVdT = 20.8 × 10 3 × V (IN) × C(dVdT) (2) Figure 3 illustrates in-rush current control performance of the device during Hot Plug-In. |
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