N-CHANNEL 100V - 0.110

Ω - 3A SO-8

P-CHANNEL 100V - 0.320

Ω - 1.5A SO-8

COMPLEMENTARY PAIR STripFET™ POWER MOSFET

1/11

June 2004

.

STS3C2F100

Rev.1.0.1

■

Ω

■

Ω

■

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

■

ULTRA LOW GATE CHARGE

■

ULTRA LOW ON-RESISTANCE

DESCRIPTION

This MOSFET is the second generation of STMicroelec-

tronis unique "Single Feature Size™" strip-based pro-

cess. The resulting transistor shows extremely high

packing density for low on-resistance, rugged avalanche

characteristics and less critical alignment steps therefore

a remarkable manufacturing reproducibility.

APPLICATIONS

■

DC MOTOR DRIVES

■

AUDIO AMPLIFIER

Ordering Information

TYPE

STS3C2F100(N-Channel)

STS3C2F100(P-Channel)

100 V

100 V

< 0.145

Ω

< 0.380

Ω

3.0 A

1.5 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STS3C2F100

S3C2F100

SO-8

TAPE & REEL

SO-8

ABSOLUTE MAXIMUM RATINGS

(

Note: P-CHANNEL MOSFET actual polarity of voltages and current

has to be reversed

Symbol

Parameter

N-CHANNEL

P-CHANNEL

Unit

100

V

Ω)

100

V

Gate- source Voltage

± 20

V

3.0

1.5

A

1.9

1.0

A

•)

Drain Current (pulsed)

12

6

A

2W

Storage Temperature

-55 to 150

°C

Max. Operating Junction Temperature

150

°C

INTERNAL SCHEMATIC DIAGRAM