STS3C2F100 datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STS3C2F100

2/11

TAB.1 THERMAL DATA

(1)

when mounted on 1 in2 pad of 2 oz. copper, t

≤ 10sec.

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)

TAB.2 OFF

TAB.3 ON

TAB.4 DYNAMIC

Rthj-amb(1)

Thermal Resistance Junction-ambient

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

n-ch

p-ch

100

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

n-ch

p-ch

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

n-ch

p-ch

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

n-ch

p-ch

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1.5 A

VGS = 10 V

ID = 1.0 A

n-ch

p-ch

0.110

0.320

0.145

0.380

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 20 V

ID= 1.5 A

VDS = 30 V

ID= 1.0 A

n-ch

p-ch

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

n-ch

p-ch

n-ch

p-ch

n-ch

p-ch

460

705

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