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STS3C2F100 数据表(PDF) 3 Page - STMicroelectronics

部件名 STS3C2F100
功能描述  COMPLEMENTARY PAIR STripFETTM POWER MOSFET
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS3C2F100 数据表(HTML) 3 Page - STMicroelectronics

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STS3C2F100
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
N-CHANNEL
VDD = 50 V
ID = 1.5 A
RG =4.7
Ω
VGS = 10 V
P-CHANNEL
VDD = 50 V
ID = 1.5 A
RG =4.7
Ω
VGS = 10 V
(Resistive Load, Figure 1)
n-ch
p-ch
n-ch
p-ch
16
14
25
20
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-CHANNEL
VDD=80V ID=3A
VGS=10V
P-CHANNEL
VDD = 80V ID = 1.5A VGS= 10V
(see test circuit, Figure 2)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
15
20
3.7
2.0
4.7
6.0
20
27
nC
nC
nC
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
N-CHANNEL
VDD = 50 V
ID = 1.5 A
RG =4.7
Ω
VGS = 10 V
P-CHANNEL
VDD = 50 V
ID = 1.5 A
RG =4.7
Ω
VGS = 10 V
(Resistive Load, Figure 1)
n-ch
p-ch
n-ch
p-ch
32
33
20
7.5
ns
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current (pulsed)
n-ch
p-ch
n-ch
p-ch
3.0
1.5
12
6.0
A
A
A
A
VSD(
∗)
Forward On Voltage
ISD = 3 A
VGS = 0
ISD = 1.5 A
VGS = 0
n-ch
p-ch
1.2
1.2
V
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
N-CHANNEL
ISD = 3 A
di/dt = 100A/
µs
VDD =50 VTj =150 oC
P-CHANNEL
ISD = 1.5 A di/dt = 100A/
µs
VDD =50 VTj =150 oC
(see test circuit, Figure 3)
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
90
65
230
175
5.0
5.4
ns
ns
nC
nC
A
A
ELECTRICAL CHARACTERISTICS (continued)



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