P1820HDB datasheet(4/4 Pages) NIKOSEM

4 / 4 page

G-5-3

N-Channel Enhancement Mode

Field Effect Transistor

P1820HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

On-Resistance VS Temperature

TJ , Junction Temperature(

˚C)

Source-Drain Diode Forward Voltage

Safe Operating Area

Single Pulse Maximum Power Dissipation

Single Pulse Time(s)

VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration[sec]

VSD, Source-To-Drain Voltage(V)

0.2

0.7

1.2

1.7

2.2

2.7

-50

-25

100

125

150

VGS=10V

ID=9A

25℃

150℃

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100ms

10ms

1ms

0.1

100

1000

NOTE :

1.VGS= 10V

2.TC=25

˚C

3.R

θJC = 1.5˚C/W

4.Single Pulse

Operation in This Area

is Limited by RDS(ON)

↓

200

400

600

800

1000

1200

1400

1600

1800

2000

0.001

0.01

0.1

100

Single Pulse

θJC =1.5˚C/W

TC=25

˚C

single pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJC = 1.5 ℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r()*RthJC

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