P1820HDB datasheet(1/4 Pages) NIKOSEM

部件名	P1820HDB

功能描述	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

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1 / 4 page

1

G-5-3

N-Channel Enhancement Mode

Field Effect Transistor

P1820HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 ° C

ID

18

A

TC = 100 ° C

9

Pulsed Drain Current

1

IDM

30

Avalanche Current

IAS

11

Avalanche Energy

L = 1mH

EAS

61

mJ

Power Dissipation

TC = 25 ° C

PD

83

W

TC = 100 ° C

33

Junction & Storage Temperature Range

TJ, Tstg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

62.5

° C / W

Junction-to-Case

RJC

1.5

1Pulse width limited by maximum junction temperature.

.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

200

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1

2

3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 200V, VGS = 0V

1

A

VDS = 160V, VGS = 0V, TJ = 125 ° C

10

Drain-Source On-State

Resistance

1

RDS(ON)

VGS = 4.5V, ID = 9A

148

188

mΩ

VGS =10V, ID = 9A

131

157

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

200V

157mΩ

18A

1: GATE

2: DRAIN

3: SOURCE

G

D

S

类似零件编号 - P1820HDB

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