P1820HDB datasheet(2/4 Pages) NIKOSEM

部件名	P1820HDB

功能描述	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

标志

2 / 4 page

G-5-3

N-Channel Enhancement Mode

Field Effect Transistor

P1820HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

Forward Transconductance

gfs

VDS = 10V, ID = 9A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

780

Output Capacitance

Coss

132

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg(VGS=10V)

VDS = 160V , ID =18A

Qg(VGS=4.5V)

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDS = 100V , ID  18A,

VGS = 10V, RGEN =25Ω

Rise Time

135

Turn-Off Delay Time

td(off)

176

Fall Time

128

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)

Continuous Current

Forward Voltage

VSD

IF = 18A, VGS = 0V

Diode Reverse Recovery Time

trr

IF= 18A, dI/dt=100A/μs

122

Diode Reverse Recovery Charge

Qrr

0.67

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature.

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