ACST4 Series

6/9

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

25

50

75

100

125

Tamb(°C)

α=180°

Printed circuit board FR4

Natural convection

S=0.5cm²

I

(A)

T(RMS)

Fig. 2-2: RMS on-state current versus ambient

temperature.

0.01

0.10

1.00

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

Zth

(j-a)

Zth

(j-c)

DPAK

TO-220FPAB

DPAK

TO-220FPAB

K = [Zth/Rth]

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40 -30 -20 -10

0

10

20

30

40 50

60

70

80

90 100 110 120 130

Tj(°C)

I

GT

I

I

, I , I [Tj] / I

, I , I [Tj = 25°C]

GTHL

GTHL

Fig. 4: Relative variation of gate trigger current,

holding current and latching versus junction

temperature (typical values).

0

1

2

3

4

5

6

7

8

25

50

75

100

125

Tj(°C)

V

dV/dt [Tj] / dV/dt [Tj = 125°C]

Fig. 5: Relative variation of static dV/dt versus

junction temperature.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

1020

3040

5060

7080

90

100

(dV/dt)c(V/µs)

V

ACST4-7C

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Fig. 6-1: Relative variation of critical rate of de-

crease of main current versus reapplied dV/dt

(typical values).

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

5

10

15

20

25

30

35

40

45

50

V

ACST4-7S

(dV/dt)c(V/µs)

Fig. 6-2: Relative variation of critical rate of de-

crease of main current versus reapplied dV/dt

(typical values).