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ACST4-7SB 数据表(PDF) 2 Page - STMicroelectronics |
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ACST4-7SB 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() ACST4 Series 2/9 Symbol Parameter Value Unit VDRM /VRRM Repetitive peak off-state voltage Tj = -10 °C 700 V IT(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz DPAK Tc = 110 °C 4 A TO-220FPAB Tc = 100 °C ITSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz 30 A F =60 Hz 33 A I 2t Fusing capability tp = 10ms 6.4 A²s dI/dt Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) Tj = 125°C F = 120 Hz 50 A/ µs VPP Non repetitive line peak pulse voltage note 1 2kV Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Note 1: according to test described by IEC61000-4-5 standard & Figure B. ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol Parameter Value Unit PG (AV) Average gate power dissipation 0.1 W PGM Peak gate power dissipation (tp = 20µs) 10 A IGM Peak gate current (tp = 20µs) 1 V GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient S = 0.5cm² DPAK 70 °C/W TO-220FPAB 60 °C/W Rth (j-l) Junction to case for full cycle sine wave conduction DPAK 2.6 °C/W TO-220FPAB 4.6 °C/W S = Copper surface under Tab THERMAL RESISTANCES |
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