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ACST4-7SB 数据表(PDF) 3 Page - STMicroelectronics |
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ACST4-7SB 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() ACST4 Series 3/9 Symbol Test Conditions ACST4-7S ACST4-7C Unit IGT VOUT=12V (DC) RL=33 Ω QI - QII - QIII Tj=25°C MAX 10 25 mA VGT VOUT=12V (DC) RL=33 Ω QI - QII - QIII Tj=25°C MAX 1 1.1 V VGD VOUT=VDRM RL=3.3k Ω Tj=125°C MIN 0.2 V IH IOUT= 100mA gate open Tj=25°C MAX 20 35 mA IL IG=2xIGtmax Tj=25°C MAX 40 60 mA VTM IOUT = 5.6A tp=380 µs Tj=25°C MAX 1.5 V VTO Tj=125°C MAX 0.90 V Rd Tj=125°C MAX 100 m Ω IDRM / IRRM VOUT = 700V Tj=25°C MAX 10 µA Tj=125°C MAX 500 dV/dt VOUT=460V gate open Tj=110°C MIN 200 500 V/ µs (dI/dt)c (dV/dt)c = 15V/ µs Tj=125°C MIN 2.0 2.5 A/ms VCL ICL = 1mA tp=1ms Tj=25°C TYP 1100 V ELECTRICAL CHARACTERISTICS For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage. Parameter Symbol Parameter description IGT Triggering gate current VGT Triggering gate voltage VGD Non-triggering gate voltage IH Holding current IL Latching current VTM Peak on-state voltage drop VTO On state threshold voltage Rd On state dynamic resistance IDRM /IRRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current VCL Clamping voltage ICL Clamping current PARAMETER DESCRIPTION |
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