SM7323EHKP

www.sinopowersemi.com

3

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.1 - February, 2017

®

Symbol

Parameter

Test Conditions

Channel 1

Unit

Min.

Typ.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

30

Gate Threshold Voltage

1.4

1.7

2.5

V

Gate Leakage Current

-

-

±10

mA

e

Drain-Source On-state Resistance

-

6

7.2

m

W

-

8.6

-

-

9

12.2

Gfs

Forward Transconductance

-

17

-

S

Diode Characteristics

e

Diode Forward Voltage

-

0.7

1.1

V

Reverse Recovery Time

-

23.7

-

ns

Charge Time

-

10.5

-

Discharge Time

-

13.2

-

Reverse Recovery Charge

-

11.6

-

nC

Dynamic Characteristics

f

Gate Resistance

-

1.6

3.2

W

Input Capacitance

Frequency=1.0MHz

-

660

-

pF

Output Capacitance

-

420

-

Reverse Transfer Capacitance

-

120

-

Turn-on Delay Time

-

11

-

ns

Turn-on Rise Time

-

9.2

-

Turn-off Delay Time

-

19.6

-

Turn-off Fall Time

-

16

-

Gate Charge Characteristics

f

Total Gate Charge

-

6.8

-

nC

Total Gate Charge

-

12.4

-

Threshold Gate Charge

-

0.65

-

Gate-Source Charge

-

0.95

-

Gate-Drain Charge

-

3.8

-

Note e：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note f：Guaranteed by design, not subject to production testing.