SM7323EHKP

www.sinopowersemi.com

2

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.1 - February, 2017

®

Symbol

Parameter

Channel 1 Channel 2

Unit

Common Ratings

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

±20

V

Maximum Junction Temperature

150

°C

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

15

18

A

Continuous Drain Current

25

a

27

a

A

Maximum Power Dissipation

20

25

W

8

10

Thermal Resistance-Junction to Case

Steady State

6

5

°C/W

Continuous Drain Current

9.9

11.8

A

7.9

9.4

b

Pulse Drain Current

40

47

A

Maximum Power Dissipation

1.13

1.3

W

0.72

0.83

c

Thermal Resistance-Junction to Ambient

t

£ 10s

54

48

°C/W

Steady State

110

96

d

Avalanche Current, Single pulse

L=0.1mH

16

20

A

d

Avalanche Energy, Single pulse

L=0.1mH

12.8

20

mJ

Note a：Max. continuous current is limited by bonding wire.

Note b：Pulse width is limited by max. junction temperature.

Note c：Surface mounted on 1in

Note d：UIS tested and pulse width are limited by maximum junction temperature 150