EMB90P06CS datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2015/4/24

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EMB90P06CS

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐1.0 ‐1.8

‐3.0

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐48V, VGS = 0V

‐1

A

VDS = ‐40V, VGS = 0V, TJ = 125 °C

‐25

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐4.5V ‐10

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐10V, ID = ‐10A

mΩ

VGS = ‐4.5V, ID = ‐8A

110

140

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐10A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐25V, f = 1MHz

963

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 15mV, VDS = 0V, f = 1MHz

6.8

Total Gate Charge

1,2

VDS = ‐30V, VGS = ‐10V,

ID = ‐10A

16.2

Gate‐Source Charge

1,2

Qgs

2.0

Gate‐Drain Charge

1,2

Qgd

3.5

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐10

Pulsed Current

ISM

‐40

Forward Voltage

VSD

IF = IS, VGS = 0V

1.3

Reverse Recovery Time

trr

IF = ‐5A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

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