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EMB90P06CS 数据表(PDF) 1 Page - Excelliance MOS Corp. |
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EMB90P06CS 数据表(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 5 page ![]() 2015/4/24 p.1 EMB90P06CS G S D P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐60V RDSON (MAX.) 90mΩ ID ‐10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID ‐10 A TC = 100 °C ‐7 Pulsed Drain Current 1 IDM ‐40 Avalanche Current IAS ‐10 Avalanche Energy L = 0.1mH, ID=‐10A, RG=25Ω EAS 5 mJ Repetitive Avalanche Energy 2 L = 0.05mH EAR 2 Power Dissipation TC = 25 °C PD 27 W TC = 100 °C 11 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 4.5 °C / W Junction‐to‐Ambient RJA 85 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
类似零件编号 - EMB90P06CS |
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类似说明 - EMB90P06CS |
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