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数据搜索系统，热门电子元器件搜索 |
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KI013P 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KI013P 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 4 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET Features VDS (V) =-20V RDS(ON) 130m (VGS =-4.5V) RDS(ON) 190m (VGS =-2.5V) Absolute Maximum Ratings Ta = 25 G S D 2 3 1 KI013P Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current *1 Ta=25 -2.3 Ta=70 -1.5 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 1.25 Ta=70 0.8 Thermal Resistance.Junction- to-Ambient *1 100 Thermal Resistance.Junction- to-Ambient *3 166 Junction Temperature TJ 150 Storage Temperature Range Tstg -55to150 *1 Surface Mounted on FR4 Board, t 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. RthJA ID PD A V /W W 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Gate 2.Source 3.Drain 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 |
类似零件编号 - KI013P |
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类似说明 - KI013P |
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