KI013P datasheet(2/4 Pages) KEXIN

2 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel Enhancement MOSFET

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250

A, VGS=0V

-20

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V, TJ=55

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=

±8V

±100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250

-0.45

-1

VGS=-4.5V, ID=-2.8A

105

130

VGS=-2.5V, ID=-2.0A

145

190

VGS=-4.5V, VDS

-5V

-6

VGS=-2.5V, VDS

-5V

-3

Forward Transconductance *1

gFS

VDS=-5V, ID=-2.8A

6.5

Input Capacitance

Ciss

415

Output Capacitance

Coss

223

Reverse Transfer Capacitance

Crss

Total Gate Charge

5.8

Gate Source Charge

Qgs

0.85

Gate Drain Charge

Qgd

1.7

Turn-On DelayTime

td(on)

Turn-On Rise Time

VGEN=-4.5V, VDS=-6V, RL=6

,RG=6

Turn-Off DelayTime

td(off)

ID=1.0A *3

Turn-Off Fall Time

Continuous Source Current (Diode Conduction

-1.6

Diode Forward Voltage

VSD

IS=-1.6A,VGS=0V

-0.8

-1.2

VGS=0V, VDS=-6V, f=1MHz *2

VGS=-4.5V, VDS=-6V, ID=-2.8A *2

On state drain current *1

ID(ON)

Zero Gate Voltage Drain Current

IDSS

RDS(On)

Static Drain-Source On-Resistance *1

*1 Pulse test: PW

300us duty cycle

2%.

*2 For DESIGN AID ONLY, not subject to production testing.

*3 Switching time is essentially independent of operating temperature.

Marking

3415

KI013P

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