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KI013P 数据表(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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KI013P 数据表(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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3 / 4 page ![]() SMD Type www.kexin.com.cn 3 MOSFET P-Channel Enhancement MOSFET Typical Characterisitics On-Resistance vs. Drain Current s c i t s i r e t c a r a h C r e f s n a r T s c i t s i r e t c a r a h C t u p t u O VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 01 2 3 45 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T C =- 55C 125 C 0, 0.5, 1 V 2.5 V V GS =5,4.5,4,3.5,3V 1.5 V 2V 0 200 400 600 800 1000 0369 12 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 0 50 100 150 0 1 2 3 4 5 02468 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02 4 6 8 10 Gate Charge Q - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) C rss C oss C iss V DS =6V I D =2.8 A ID - Drain Current (A) Capacitance On-Resistance vs. Junction T emperature V GS =4.5 V I D =2.8 A TJ - Junction Temperature ( C) V GS =2.5 V V GS =4.5 V 25 C KI013P |
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