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GD9FS1G8F2AMG 数据表(PDF) 37 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD9FS1G8F2AMG 数据表(HTML) 37 Page - GigaDevice Semiconductor (Beijing) Inc. |
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37 / 55 page ![]() GD9Fx1GxF2A 37 Parameter page CRC value table Device Model ORGANIZATION VCC RANGE CRC value B254/B255 “GD9FS1G8F2A” 128M x 8bit 1.7v ~ 1.95v D0H/DBH “GD9FS1G6F2A” 64M x 16bit 1.7v ~ 1.95v F8H/18H “GD9FU1G8F2A“ 128M x 8bit 2.7v ~ 3.6v 88H/D5H “GD9FU1G6F2A“ 64M x 16bit 2.7v ~ 3.6v A0H/16H 8.6 Read Status (70H) The device contains a Status Register which may be read to find out whether an operation is completed and whether the program or erase operation is completed successfully. After writing 70H command to the command register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE# or RE#, whichever occurs last. This allows the system to poll the progress of each device in multiple memory connections even when R/B# pins are common- wired. RE# or CE# does not need to be toggled for updated status. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command (00h) should be given before starting read cycles. 70h CLE CE# WE# RE# Status IO0-7 tDS tDH tCHZ tCOH tRHZ tRHOH tCLR tCS tCH tCEA tWP tWHR tCLR tCLS tREA tIR Figure 28: Read Status figures |
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