GD25LE32DVJG datasheet(4/72 Pages) GIGADEVICE

4 / 72 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LE32D

1. FEATURES

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32M-bit Serial Flash

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Fast program/Erase Speed

-4096K-byte

-Page Program time: 0.7ms typical

-256 bytes per programmable page

-Sector Erase time: 90ms typical

-Block Erase time: 0.3/0.45s typical

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Standard, Dual, Quad SPI, QPI

-Chip Erase time: 20s typical

-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#

-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#

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Flexible Architecture

-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

-Uniform Sector of 4K-byte

-QPI: SCLK, CS#, IO0, IO1, IO2, IO3

-Uniform Block of 32/64K-byte

-Erase/Program Suspend/Resume

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High Speed Clock Frequency

-120MHz for fast read with 30PF load

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Low Power Consumption

-Dual I/O Data transfer up to 240Mbits/s

-35uA typical stand-by current

-Quad I/O Data transfer up to 480Mbits/s

-0.2uA typical power down current

-QPI Mode Data transfer up to 480Mbits/s

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Advanced security Features

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Allows XIP(execute in place)operation

-128-bit Unique ID for each device

-Continuous Read With 8/16/32/64-byte Wrap

-3x1024-Byte Security Registers With OTP Lock

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Software/Hardware Write Protection

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Single Power Supply Voltage

-Write protect all/portion of memory via software

-Full voltage range:1.65~2.0V

-Enable/Disable protection with WP# Pin

-Top/Bottom Block protection

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Data retention

-20-year data retention typical

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Minimum 100,000 Program/Erase Cycles

GD25LE32DVJG 数据表(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25LE32DVJG 数据表(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

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