GD25LE32DVJG datasheet(54/72 Pages) GIGADEVICE

部件名	GD25LE32DVJG

功能描述	1.8V Uniform Sector Dual and Quad Serial Flash

PDF	72 Pages

Scroll/Zoom	100%

制造商	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

网页	http://www.gigadevice.com/

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54 / 72 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LE32D

8. ELECTRICAL CHARACTERISTICS

8.1 Power-On Timing

Figure39. Power-On Timing Sequence Diagram

VCC(max.)

VCC(min.)

tVSL

Chip Selection is not allowed

Full Device

Access

Allowed

Time

VPWD(max.)

tPWD

VCC

Table3. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

Max.

Unit

tVSL

VCC (min.) to device operation

1.8

VWI

Write Inhibit Voltage

1.4

VPWD

VCC voltage needed to below VPWD for ensuring initialization will occur

0.5

tPWD

The minimum duration for ensuring initialization will occur

300

μs

8.2 Initial Delivery State

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFH).The Status

8.3 Absolute Maximum Ratings

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Applied Input/Output Voltage

-0.6 to VCC+0.4

Transient Input/Output Voltage (note: overshoot)

-2.0 to VCC+2.0

VCC

-0.6 to 2.5

GD25LE32DVJG 数据表(PDF) 54 Page - GigaDevice Semiconductor (Beijing) Inc.

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