GD25VE32CSMS datasheet(46/63 Pages) GIGADEVICE

部件名	GD25VE32CSMS

功能描述	Uniform Sector Dual and Quad Serial Flash

PDF	63 Pages

Scroll/Zoom	100%

制造商	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

网页	http://www.gigadevice.com/

标志

46 / 63 page

Uniform Sector

Dual and Quad Serial Flash

GD25VE32C

8. ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Figure 40. Power-on Timing Sequence Diagram

Table6. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

Max.

Unit

tVSL

VCC (min.) to device operation

VWI

Write Inhibit Voltage

1.5

2.1

VPWD

VCC voltage needed to below VPWD for ensuring initialization will occur

0.5

tPWD

The minimum duration for ensuring initialization will occur

300

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register

bits are set to 0, except DRV0 bit (S21) is set to 1.

8.3. ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

℃

Storage Temperature

-65 to 150

℃

Applied Input / Output Voltage

-0.6 to VCC+0.4

Transient Input / Output Voltage (note: overshoot)

-2.0 to VCC+2.0

VCC

-0.6 to 4.2

VCC(max.)

VCC(min.)

tVSL

Chip Selection is not allowed

Full Device

Access

Allowed

Time

VPWD(max.)

tPWD

VCC

GD25VE32CSMS 数据表(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

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