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TLV9001UIDBVR 数据表(PDF) 14 Page - Texas Instruments

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部件名 TLV9001UIDBVR
功能描述  Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems
PDF  81 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TLV9001UIDBVR 数据表(HTML) 14 Page - Texas Instruments

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TLV9001, TLV9002, TLV9004
SBOS833L – OCTOBER 2017 – REVISED MAY 2019
www.ti.com
Product Folder Links: TLV9001 TLV9002 TLV9004
Submit Documentation Feedback
Copyright © 2017–2019, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2)
This package option for TLV9001 is preview only.
7.4 Thermal Information: TLV9001
THERMAL METRIC(1)
TLV9001
UNIT
DBV (SOT-23)
DCK (SC70)
DPW (X2SON)
DRL (SOT-553)(2)
5 PINS
5 PINS
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
232.9
239.6
470.0
TBD
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
153.8
148.5
211.9
TBD
°C/W
RθJB
Junction-to-board thermal resistance
100.9
82.3
334.8
TBD
°C/W
ψJT
Junction-to-top characterization parameter
77.2
54.5
29.8
TBD
°C/W
ψJB
Junction-to-board characterization parameter
100.4
81.8
333.2
TBD
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
7.5 Thermal Information: TLV9001S
THERMAL METRIC(1)
TLV9001S
UNIT
DBV (SOT-23)
6 PINS
RθJA
Junction-to-ambient thermal resistance
232.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
153.8
°C/W
RθJB
Junction-to-board thermal resistance
100.9
°C/W
ψJT
Junction-to-top characterization parameter
77.2
°C/W
ψJB
Junction-to-board characterization parameter
100.4
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2)
This package option for TLV9002 is preview only.
7.6 Thermal Information: TLV9002
THERMAL METRIC(1)
TLV9002
UNIT
D
(SOIC)
DGK
(VSSOP)
DGS
(VSSOP)
DSG
(WSON)
PW
(TSSOP)
DDF
(SOT-23)(2)
8 PINS
8 PINS
10 PINS
8 PINS
8 PINS
8 PINS
RθJA
Junction-to-ambient
thermal resistance
207.9
201.2
169.5
103.2
200.7
183.7
°C/W
RθJC(top)
Junction-to-case (top)
thermal resistance
92.8
85.7
84.1
120.1
95.4
112.5
°C/W
RθJB
Junction-to-board thermal
resistance
129.7
122.9
113
68.8
128.6
98.2
°C/W
ψJT
Junction-to-top
characterization
parameter
26
21.2
15.8
14.7
27.2
18.8
°C/W
ψJB
Junction-to-board
characterization
parameter
127.9
121.4
111.6
68.5
127.2
97.6
°C/W
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
7.7 Thermal Information: TLV9002S
THERMAL METRIC(1)
TLV9002S
UNIT
DGS (VSSOP)
RUG (X2QFN)
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
169.5
194.2
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
84.1
90.3
°C/W
RθJB
Junction-to-board thermal resistance
113
122.2
°C/W
ψJT
Junction-to-top characterization parameter
15.8
3.5
°C/W
ψJB
Junction-to-board characterization parameter
111.6
118.8
°C/W



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