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V62/12615-01XE-R 数据表(PDF) 12 Page - Texas Instruments |
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V62/12615-01XE-R 数据表(HTML) 12 Page - Texas Instruments |
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12 / 98 page  12 DP83848-EP SLLSEC6E – SEPTEMBER 2012 – REVISED JUNE 2019 www.ti.com Submit Documentation Feedback Product Folder Links: DP83848-EP Specifications Copyright © 2012–2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 4 Specifications 4.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage –0.5 4.2 V VIN DC input voltage –0.5 VCC + 0.5 V VOUT DC output voltage –0.5 VCC + 0.5 V TSTG Storage temperature –65 150 °C TJ Operating junction temperature –55 150 °C TL Lead temperature (soldering, 10 seconds) 260 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4.2 ESD Ratings RZAP = 1.5 kΩ, CZAP = 100 pF VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 (1) Provided that Thermal Pad is soldered down. 4.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Supply voltage 3 3.6 V TA Operating free-air temperature(1) –55 125 °C PD Power dissipation 267 mW (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 4.4 Thermal Information THERMAL METRIC(1) DP83848-EP UNITS PHP PTB 48 PINS θJA Junction-to-ambient thermal resistance 35.74 49.0 °C/W θJCtop Junction-to-case (top) thermal resistance 21.8 62.9 °C/W θJB Junction-to-board thermal resistance 19.5 30.4 °C/W ψJT Junction-to-top characterization parameter 1.2 7.3 °C/W ψJB Junction-to-board characterization parameter 19.4 30.3 °C/W θJCbot Junction-to-case (bottom) thermal resistance 3.2 9.5 °C/W |
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