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STUSB4500 数据表(PDF) 27 Page - STMicroelectronics |
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STUSB4500 数据表(HTML) 27 Page - STMicroelectronics |
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27 / 41 page ![]() 7.3 Electrical and timing characteristics Unless otherwise specified: VDD = 5 V, TA = 25 °C, all voltages are referenced to GND. Table 22. Electrical characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IDD (SNK) Current consumption Device idle as a SINK (not connected, no communication) VSYS @ 3.3 V VDD @ 5.0 V 115 110 140 160 165 210 µA µA TLOAD I2C registers loading time from NVM At power-up or after a reset 30 ms CC1 and CC2 pins Rd CC pull-down resistors -40 °C < TA < +105 °C -10% 5.1 +10% kΩ RINCC CC input impedance Terminations off 200 kΩ VTH0.2 Detection threshold 1 Min. IP-USB detection by sink on Rd, min CC voltage for connected sink 0.15 0.20 0.25 V VTH0.66 Detection threshold 2 Min. I P_1.5 detection by sink on Rd 0.61 0.66 0.71 V VTH1.23 Detection threshold 3 Min. I P_3.0 detection by sink on Rd 1.16 1.23 1.31 V VTH2.6 Detection threshold 4 Max. CC voltage for connected sink 2.45 2.60 2.75 V VOVP Overvoltage protection on CC pins 5.82 6 6.18 V VBUS_VS_DISCH pin monitoring and driving VTHUSB VBUS disconnection threshold (5 V USB Type-C or PDO1 selected) VSYS = 3.0 to 5.5 V 3.2 3.3 3.4 V VTH0V VBUS safe 0 V threshold (vSafe0V) VSYS = 3.0 to 5.5 V 0.5 0.6 0.7 V IDISUSB VBUS discharge current Through external resistor connected to VBUS_VS_DISCH pin 50 mA TDISUSB0V VBUS discharge time to 0 V At detachment, during error recovery state or hard reset, Coefficient TDISPAR0V programmable by NVM, Default TDISPAR0V = 9, TDISUSB0V = 756 ms 70 *TDISPAR0V 84 *TDISPAR0V 100 *TDISPAR0V ms TDISUSBPDO VBUS transition discharge time to new PDO At transition to a lower PDO voltage, Coefficient TDISPARPDO programmable by NVM, Default TDISPARPDO = 12, TDISUSBPDO = 288 ms 20 *TDISPARPDO 24 *TDISPARPDO 28 *TDISPARPDO ms STUSB4500 Electrical and timing characteristics DS12499 - Rev 2 page 27/41 |
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