EPC2016C datasheet(2/6 Pages) EPC

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eGaN® FET DATASHEET

EPC2016C

| 2

VDS – Drain-to-Source Voltage (V)

1.0

1.5

2.0

2.5

3.0

VGS

= 5 V

V = 4 V

V = 3 V

V = 2 V

VGS – Gate-to-Source Voltage (V)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

VGS – Gate-to-Source Voltage (V)

2.5

2.0

3.0

3.5

4.0

4.5

5.0

2.5

2.0

3.0

3.5

4.0

4.5

5.0

VGS – Gate-to-Source Voltage (V)

ID = 11 A

25˚C

125˚C

VDS = 3 V

25˚C

125˚C

Figure 1: Typical Output Characteristics at 25°C

Figure 2: Transfer Characteristics

Figure 3: RDS(on) vs. VGS for Various Drain Currents

Figure 4: RDS(on) vs. VGS for Various Temperatures

0.5

ID = 8 A

ID = 12 A

ID= 20 A

ID= 40 A

Dynamic Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VGS = 0 V, VDS = 50 V

360

420

COSS

Output Capacitance

210

310

CRSS

Reverse Transfer Capacitance

3.2

4.8

Gate Resistance

0.4

Total Gate Charge

VDS = 50 V, ID = 11 A

3.4

4.5

QGS

Gate-to-Source Charge

1.1

QGD

Gate-to-Drain Charge

0.55

QG(TH)

Gate Charge at Threshold

0.7

QOSS

Output Charge

VGS = 0 V, VDS = 50 V

QRR

Source-Drain Recovery Charge

All measurements were done with substrate connected to source.

Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.

Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.

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