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STM32MP151AAB3 数据表(PDF) 159 Page - STMicroelectronics

部件名 STM32MP151AAB3
功能描述  Arm® Cortex®-A7 800 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog
PDF  253 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP151AAB3 数据表(HTML) 159 Page - STMicroelectronics

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DS12500 Rev 3
159/253
STM32MP151A/D
Electrical characteristics
232
to prevent unrecoverable errors occurring (see application note AN1015 available from the
ST website www.st.com.).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.15
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Static latchup
Two complementary static tests are required on three parts to assess the latchup
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
Table 46. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/Fmpuss_ck]
Unit
24/650 MHz 24/800 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LFBGA448 package,
Fmcu_ck = 209 MHz,
M4 core not running,
conforming to IEC61967-2
0.1 to 30 MHz
5
5
dBµV
30 to 130 MHz
-2
-1
130 MHz to 1 GHz
19
22
1 GHz to 2 GHz
9
10
EMI Level
3.5
3.5
-
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body
model)
TA = +25 °C conforming
to ANSI/ESDA/JEDEC
JS-001
All
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming
to ANSI/ESDA/JEDEC
JS-002
All
C1
250
1. Guaranteed by characterization results.



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