FPD2250DFN datasheet(5/5 Pages) FILTRONIC

5 / 5 page

FPD2250DFN

LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

Phone: +1 408 850-5790

http://www.filtronic.co.uk/semis.com

Revised: 11/14/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source

voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which

would normally distort the current measurement (this effect has been filtered from the I-V curves

presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements,

even in stabilized circuits.

Recommendation: Traditionally a device’s IDSS rating (IDS at VGS = 0V) was used as a predictor of

RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain

compression).

For pHEMTs it can be shown that there is no meaningful statistical correlation

between IDSS and P1dB; specifically a linear regression analysis shows r

2 < 0.7, and the regression

fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary

with the quiescent operating point IDS.

FPD2250DFN 数据表(PDF) 5 Page - Filtronic Compound Semiconductors